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Coexisting holes and electrons in high-T C materials: implications from normal state transport |
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| Authors: | Dale R Harshman John D Dow Anthony T Fiory |
| Institution: | 1. Physikon Research Corporation , Lynden, WA 98264, USA;2. Department of Physics , University of Notre Dame , Notre Dame, IN 46556, USA;3. Department of Physics , Arizona State University , Tempe, AZ 85287, USA drh@physikon.net;5. Department of Physics , Arizona State University , Tempe, AZ 85287, USA;6. Institute for Postdoctoral Studies , 6031 East Cholla Lane, Scottsdale, AZ 85253, USA;7. Department of Physics , New Jersey Institute of Technology , Newark, NJ 07102, USA |
| Abstract: | Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) dc transport data reported for eight bulk-crystal and six oriented-film specimens of YBa2Cu3O7?δ, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7?δ and Bi2Sr2CaCu2O8+δ. The electron band exhibits extremely strong scattering; the extrapolated dc residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole–electron analysis of Hall angle data suggests that the electrons possess the greater effective mass. |
| Keywords: | high-temperature superconductivity normal state resistivity Hall effect |