Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores

Authors:	M Lancin M Texier G Regula B Pichaud

Institution:	1. Institut Matériaux Microélectronique Nanosciences de Provence, UMR-CNRS 6242, Université Paul Cézanne , 13397 Marseille-cedex 20, France marsye.lancin@univ-cezanne.fr;3. Institut Matériaux Microélectronique Nanosciences de Provence, UMR-CNRS 6242, Université Paul Cézanne , 13397 Marseille-cedex 20, France

Abstract:

Keywords:	stacking fault defect structure dislocation microstructure quantum well silicon carbide