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Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM |
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| Authors: | Lei Zhang Verena Portz Michael Schnedler Lei Jin Yuhan Wang Xiaopeng Hao |
| Affiliation: | 1. Peter Grünberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany;2. State Key Laboratory of Crystal Materials, Shandong University, Jinan, People's Republic of China;3. Department of Physics, National Taiwan University, Taipei, Taiwan;4. Ernst Ruska-Centrum, Forschungszentrum Jülich GmbH, Jülich, Germany;5. State Key Laboratory of Crystal Materials, Shandong University, Jinan, People's Republic of China |
| Abstract: | |
| Keywords: | Dislocation bending step-graded (Al Ga)N/AlN cross-section scanning tunnelling microscopy nitrides on silicon |