Effects of gas temperature on optical and transport properties of a-Si:H films deposited by PECVD |
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| Authors: | N-M Liao Y-D Jiang Z-M Wu K-C Qi S-B Li |
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| Institution: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu, China;2. School of Optoelectronic Information, University of Electronic Science and Technology of China , Chengdu, China |
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| Abstract: | Effects of silane temperature (T g) before glow-discharge on the optical and transport properties of hydrogenated amorphous silicon (a-Si:H) thin films were investigated. The optical measurements show that the refractive index increases with increasing T g. The transport characterizations show that when T g increases, the dark conductivity increases. However, the temperature coefficient of resistance decreases. In addition, after holding at 130°C for 20 h, the resistance variation, ΔR/R, of the films deposited at T g = room temperature (10.8%) is much larger than those deposited at silane temperatures of 80°C (3%) and 160°C (2%). This can be attributed to different rates of defect creation in a-Si:H films caused by various T g. |
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| Keywords: | hydrogenated amorphous silicon gas temperature plasma-enhanced chemical vapor deposition optical property transport property thin film |
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