首页 | 本学科首页   官方微博 | 高级检索  
     


In-situ and ex-situ study of crystallization behaviour of magnetron sputtered Ni63Zr37 amorphous thin film
Authors:Bibhu Prasad Sahu  Arya Chatterjee  Amlan Dutta  Rahul Mitra
Affiliation:1. Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, Indiabibhu.igit@iitkgp.ac.in;3. Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, India
Abstract:ABSTRACT

The stages of crystallization of magnetron sputter-deposited Ni63Zr37 film with mostly amorphous structure have been investigated by differential scanning calorimetry (DSC) and in-situ annealing at 300°C by use of heating stage on a high-resolution transmission electron microscope (HRTEM). These results have been further confirmed by grazing incidence X-ray diffraction analyses of thin film specimens annealed ex-situ at 300°C for various durations. The temperature for crystallization found by DSC has been found to increase from 371°C to 434°C with an increase in heating rate from 3°C/min to 10°C/min, and the apparent activation energy for amorphous to crystalline transformation has been found as ~260.2?kJ/mol from the Kissinger plot. Studies on HRTEM using in-situ heating stage have shown the crystallization to occur on annealing at 300°C for ~10?min. Crystallization at a temperature lower than that found by DSC is attributed to structural relaxation with reduction of free volume due to thermal activation. It has been observed that Ni3Zr forms first due to its large negative enthalpy of formation, and is followed by the formation of Ni-rich solid solution (Niss) grains. HRTEM studies have shown grain rotation with the formation of partial dislocations at Ni3Zr-Niss interfaces as well as twinning followed by detwinning with dislocation formation in the Niss matrix possibly to reduce the interfacial energy.
Keywords:Nickel Zirconium thin films  annealing  in-situ heating  crystallization  differential scanning calorimetry  high-resolution transmission electron microscopy
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号