Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells |
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| Authors: | E Tiras S Ardali M Gunes C Fontaine A Arnoult |
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| Institution: | 1. Department of Physics, Faculty of Science , Anadolu University, Yunus Emre Campus , Eskisehir 26470, Turkey;2. School of Computer Science and Electronic Engineering , University of Essex , Wivenhoe Park, Colchester, CO4 3SQ, UK;3. LAAS-CNRS , 7 avenue du colonel Roche, 31 077 Toulouse Cedex 4, France |
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| Abstract: | Electronic transport in n- and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T?=?1.8 and 32?K and at magnetic fields up to B?=?11?T. The momentum relaxation and the quantum lifetimes (τq ) of electrons and holes are obtained directly from the temperature and magnetic field dependencies of the SdH oscillation amplitudes, respectively. A detailed analysis of quantum and transport life times indicates that the momentum relaxation of holes is forward displaced in k-space, while a large angle-scattering mechanism is prominent for the electrons. This discrepancy is believed to be due to scattering of electrons with nitrogen complexes and to the lack of such a mechanism for holes. |
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| Keywords: | GaInNAs effective mass quantum lifetime |
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