Incident-energy dependence of crystalline structures of ion beam deposited Au thin films |
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| Authors: | T. Takizawa T. Maeda M. Kiuchi S. Yoshimura S. Hamaguchi |
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| Affiliation: | 1. Center for Atomic and Molecular Technologies , Graduate School of Engineering , Osaka University , 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan takizawa@ppl.eng.osaka-u.ac.jp;3. Center for Atomic and Molecular Technologies , Graduate School of Engineering , Osaka University , 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;4. Center for Atomic and Molecular Technologies , Graduate School of Engineering , Osaka University , 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;5. National Institute of Advanced Industrial Science and Technology (AIST) , 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan |
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| Abstract: | The energy dependence of crystalline structures in Au thin-film deposition processes was investigated with the use of a low-energy mass-selected ion beam system. Au films deposited on Si(100) untreated wafer surfaces by the beam system at different ion energies in the range of 20–200?eV were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD) and in-situ reflection high-energy electron diffraction (RHEED). The XRD results show that the kinetic energy provided by ion bombardment can facilitate crystal growth with specific orientations such as (100) or (110), the surfaces of which have relatively high surface energies. Our observations also suggest that each crystalline orientation appears only in a specific energy range of ion bombardment. These results indicate that Au crystalline orientations may be controlled by the ion irradiation energy during deposition processes. |
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