Quantum efficiency of light-induced defect creation in hydrogenated amorphous silicon and amorphous As2Se3 |
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Authors: | K Shimakawa Meherun-Nessa H Ishida Ashtosh Ganjoo |
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Institution: | Department of Electrical and Electronic Engineering , Gifu University , Gifu 501-11, Japan |
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Abstract: | The quantum efficiency (QE) of light-induced metastable defect creation in hydrogenated amorphous silicon (a-Si?:?H) and amorphous As2Se3 (a-As2Se3) by bandgap and subgap illumination has been deduced from photocurrent measurements. The QE decreases with increasing number of absorbed photons. A higher QE for a-As2Se3 than for a-Si?:?H has been observed and this is interpreted in terms of the higher structural flexibility of a-As2Se3. We have also found that, for both materials, subgap illumination yields a higher QE than does bandgap illumination. |
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