|
|||||
|
|
Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments |
|
| Authors: | C Ghica L C Nistor H Bender O Richard G Van Tendeloo A Ulyashin |
| Institution: | 1. National Institute for Materials Physics , P.O. Box MG-7 Magurele, 077125 Bucharest, Romania cghica@infim.ro;3. National Institute for Materials Physics , P.O. Box MG-7 Magurele, 077125 Bucharest, Romania;4. IMEC , Kapeldreef 75, B-3001 Leuven, Belgium;5. EMAT , University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium;6. University of Oslo , Sem Saelands vei 24, P.O. Box 1048 Blindern, N-0316 Oslo, Norway |
| Abstract: | Microstructural characterization by transmission electron microscopy of the {111} planar defects induced in Si by treatment in hydrogen plasma is discussed. The {111} defects are analyzed by conventional (TEM) and high-resolution transmission electron microscopy (HRTEM). Quantitative image processing by the geometrical phase method is applied to the experimental high-resolution image of an edge-on oriented {111} defect to measure the local displacements and strain field around it. Using these data, a structural model of the defect is derived. The validity of the structural model is checked by high-resolution image simulation and comparison with experimental images. |
| Keywords: | |