Investigation of the microstructure and optical properties of hydrogenated polymorphous silicon films prepared with pure silane |
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| Authors: | S. B. Li Z. M. Wu W. Li N. M. Liao Y. D. Jiang |
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| Affiliation: | 1. School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , State Key Lab of Electronic Thin Films and Integrated Devices, Chengdu 610054, P. R. China zmwu@uestc.edu.cn;3. School of Optoelectronic Information , University of Electronic Science and Technology of China (UESTC) , State Key Lab of Electronic Thin Films and Integrated Devices, Chengdu 610054, P. R. China |
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| Abstract: | The dependences of microstructure and optical properties of hydrogenated polymorphous silicon (pm-Si:H) films on total gas pressure were studied. Instead of using high diluted silane in H2, pure silane was used as the source gas. The films were grown by the radio-frequency plasma-enhanced chemical vapour deposition method. Fourier-transform infrared spectrometry was used to characterize the presence of Si m H n clusters in pm-Si:H film deposited on KBr substrate. Atomic force microscopy (AFM) analysis characterized the morphology of the pm-Si:H films and X-ray diffraction at grazing incidence angle (XRDGI) microstructure analysis also confirmed the existence of Si m H n nanocrystalline clusters in pm-Si:H. The thickness and optical constants of the films were measured by spectra ellipsometry as well as scanning electron microscopy. Derived using the Tauc relation, the dependence of optical bandgap, Eg , and coefficient, B, on the pressure during deposition process is discussed. The influence of inter-electrode distance on growth rate and surface smooth was analyzed using AFM. |
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