| 超导HEB器件制备中的图形转移技术研究 |
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| 引用本文： | 王玉,康琳,王金平,钟扬音,吴培亨.超导HEB器件制备中的图形转移技术研究[J].低温与超导,2008,36(11). |
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| 作者姓名： | 王玉 康琳 王金平 钟扬音 吴培亨 |
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| 作者单位： | 南京大学超导电子研究所,南京,210093 |
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| 摘 要： | 超导HEB热电子混频技术是目前1THZ以上频段的最佳候选技术。在HEB器件的制备中,成功刻蚀微桥是关键。文章利用EBL、光刻技术、RIE技术相结合的方式,对如何成功刻蚀微桥进行了深入研究。并通过对EBL、光刻技术和RIE条件的研究分析,确定了最佳实验条件,成功实现了HEB器件的图形转移。
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| 关 键 词： | HEB EBL 光刻 RIE |
Research of pattern transfer technology in superconductive HEB device preparation |
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| Wang Yu,Kang Lin,Wang Jinping,Zhong Yangyin,Wu Peiheng.Research of pattern transfer technology in superconductive HEB device preparation[J].Cryogenics and Superconductivity,2008,36(11). |
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| Authors: | Wang Yu Kang Lin Wang Jinping Zhong Yangyin Wu Peiheng |
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| Abstract: | Superconducting HEB mixing technology is the best candidate technology above 1THz band.How to successfully etch micro-strip is the key step in HEB device preparation.The paper gave a deep research on how to etch micro-strip in HEB Device preparation by making use of EBL,lithography and RIE.We confirmed the optimal test condition and achieve the graphics of HEB device's transfer through deep investigation and analysis of EBL,lithography and RIE conditions. |
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| Keywords: | HEB EBL RIE |
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