| 射频等离子体化学气相沉积择优取向膜的研究 |
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| 引用本文： | 谢雁,李世直.射频等离子体化学气相沉积择优取向膜的研究[J].真空电子技术,1996(3):9-11. |
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| 作者姓名： | 谢雁 李世直 |
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| 作者单位： | 青岛化工学院等离子体表面技术研究所 |
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| 摘 要： | 用Ｘ－衍射的方法分析了影响射频等离子体沉积择优取向的ＴｉＮ膜，取向的原因。
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| 关 键 词： | 氮化钛膜 回摆曲线 择优取向 射频等离子体 |
The Preferred Orientation Films Deposited by RF-PCVD |
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| Xie Yan, Li Shizhi.The Preferred Orientation Films Deposited by RF-PCVD[J].Vacuum Electronics,1996(3):9-11. |
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| Authors: | Xie Yan Li Shizhi |
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| Abstract: | A system for RF-PCVD of TiN films was described and rocking curve measurements were used for characterizing the degree of preferred orientation of the TiN films.The influences of deposition temperature,deposition time and RF power input on the preferred orientation of the film were discussed. |
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| Keywords: | TiN film Rocking curve Preferred orientation |
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