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真空微电子微波管
引用本文:庄学曾.真空微电子微波管[J].真空电子技术,1996(2):9-12.
作者姓名:庄学曾
作者单位:中国科学院电子学研究所
摘    要:本文在扼要地提及真空微电子学的主要进展(如:场发射阵列,场发射显示器和微波毫米波器件等)后,主要叙述了发展真空微电子微波管的主要内容,问题及其意义,场发射阵列的三个重要特点(冷阴极,高发射能力和栅极控制)可用于发展新一代的高频率,高效率,高功率,超小型和长寿命的面向21世纪的高性能微波管:真空微电子微波管,双栅极场发射阵列,电子流的形成与维持,与其相匹配的互作用电路,特殊的器件结构和相关的制管工艺

关 键 词:真空微电子学  微波管  毫米波管  真空电子器件

Vacuum Microelectronic Microwave Tubes
Zhuang Xuezeng.Vacuum Microelectronic Microwave Tubes[J].Vacuum Electronics,1996(2):9-12.
Authors:Zhuang Xuezeng
Abstract:after briefing the major progress in the field of vacuum microelectronics (such as field emission array,field emission displays,microwave and millimeter-wave devices etc. ),this paper deals mainly with possibilities,problems and the practical significance in the development of the vacuum microelectronic microwave tubes. Three major features of FEA(i. e. cold cathode,high emission ability and self gate control)make it possible to develop a new generation of efficiency, higher output power,long life and miniaturization. Mentioned also in the paper are some research topics in developing VMEMT,such as the dual-gated FEA,beam forming and preservation,interaction circuits,special structure of the device and*its components and the corresponding tube pro cessing technics.
Keywords:Vacuum microelectronics  Microwave tube  Millimeter-wave tube  Field emission array  Cold cathode  Dual-gated field emission array  
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