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Simulation of plasma doping process by using the localized molecular dynamics method |
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| Authors: | Ji Hui-Hui Yu Min Ren Li-Ming Zhang Xing Huang Ru and Zhang You-Guang |
| Institution: | Department of Microelectronics, Peking University, Beijing 100871, China; Department of Microelectronics, Peking University, Beijing 100871, China;School of Electronic and Information Engineering, Beihang University, Beijing 100083, China; School of Electronic and Information Engineering, Beihang University, Beijing 100083, China |
| Abstract: | Plasma doping is the candidate for semiconductor doping. Accurate simulation of the doping technology is needed for the advanced integrated circuit manufacturing. In this paper, the plasma doping process simulation is performed by using the localized molecular dynamics method. Models that involve the statistics of the implanted compositions, angles and energies are developed. The effect of the model on simulation results is studied. The simulation results about the doping concentration profile are supported by experimental data. |
| Keywords: | plasma doping simulation molecular dynamics |
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