The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers |
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Authors: | G Ecke R Kosiba J Pezoldt H Rößler |
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Institution: | Technische Universit?t Ilmenau, Institut für Festk?rperelektronik, Postfach 100565, D-98684 Ilmenau, Germany, DE
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Abstract: | The concentrations and the lattice structure of silicon carbide layers and single crystals are influenced by ion beam sputtering.
The influence of ion beam sputtering and primary ion energy on preferential sputtering is investigated by Auger measurements
and T-DYN simulations. In dependence on primary ion energy C is enriched. Preferential sputtering increases with decreasing
ion energy. Sputtering has a strong influence on the Auger peak shapes of SiC. Except for low ion energy and glancing incidence
the peak shapes are independent of the primary ion energy. T-DYN simulations help to explain and understand the near-surface
processes during sputtering of SiC. For ion energy dependence of preferential sputtering there is a good agreement of the
T-DYN simulation and the Auger measurement.
Received: 10 October 1998 / Revised: 26 March 1999 / Accepted: 2 April 1999 |
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