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Theoretical investigation of intersubband transition in AlxGa1−xN/GaN/AlyGa1−yN step quantum well
Authors:J.M. Li   Y.W. Lu   X.X. Han   J.J. Wu   X.L. Liu   Q.S. Zhu  Z.G. Wang
Affiliation:aKey Lab of Semiconductor Materials Science, Institute of semiconductors, Chinese Academy of sciences, Beijing 100083, P.R.China;bDepartment of Physics, Beijing Jiaotong University, Beijing 100044, P.R.China
Abstract:A modified self-consistent method is introduced for the design of AlxGa1−xN/GaN step quantum well (SQW) with the position and energy-dependent effective mass. The effects of nonparabolicity are included. It is shown that the nonparabolicity effect is minute for the lowest subband energy level and grows in size for the higher subband states. The effects of nonparabolicicty have significant influence on the transition energies and the oscillator strengths and should be taken into account in the investigation of the optical transitions. The strong asymmetric property introduced by the step quantum well magnifies the weak intersubband transition from the ground state to the third state (1→3). It is shown that in an appropriate scope, the intersubband transition (1→3) has the comparable oscillator strength with transition from the ground state to the second one (1→2), which suggests the possible application of the two-color photodetectors. The results of this work should provide useful guidance for the design of optically pumped asymmetric quantum well lasers and quantum well infrared photodetectors (QWIPs).
Keywords:Quantum wells   Semiconductors   Intersubband transitions
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