Electrodeposition of Mo-Se thin films from a sulfamatic electrolyte

Mo-Se thin films have been electrodeposited on conducting tin oxide (SnO₂) coated glass substrates from a sulfamatic solution containing Na₂MoO₄ and H₂SeO₃ under potentiostatic conditions. The deposition potential varied from –0.6 V to –0.9 V, at a deposition temperature of 20–40 °C and pH 6.5. X-ray diffraction analysis revealed that the overall composition of the films deposited is consistent with the formation of MoO₂ and MoSe₂. The lattice parameters of the as-deposited MoSe₂ are a=b=3.2340 Å and c=13.2859 Å, which fits a hexagonal structure.