| 离子注入SI—GaAs做激光器被动调Q元件的研究 |
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| 引用本文： | 李朝阳,王勇刚,黄骝.离子注入SI—GaAs做激光器被动调Q元件的研究[J].应用光学,2004,25(4):59-62. |
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| 作者姓名： | 李朝阳 王勇刚 黄骝 |
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| 作者单位： | 1. 北京工业大学应用数理学院,北京,100022
2. 中科院半导体所,北京,100083 |
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| 摘 要： | 本文从半导体材料GaAs的能级结构出发，探讨了GaAs做固体激光器被动调Q器件的可行性，对离子注入半绝缘GaAs用做Nd：YAG激光器中被动调Q元件的机理进行了实验研究，实验中腔型选择直腔式平平腔，Nd：YAG采用脉冲氙灯抽运，在腔型1Hz下获得了单脉冲宽度为62ns的调Q波形输出。
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| 关 键 词： | GaAs 被动调Q 离子注入 Nd∶YAG激光器 |
| 文章编号： | 1002-2082(2004)04-0059-04 |
| 收稿时间： | 2003/5/22 |
Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs |
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| LI Zhao-yang,WANG Yong-gang,HUANG Liu.Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs[J].Journal of Applied Optics,2004,25(4):59-62. |
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| Authors: | LI Zhao-yang WANG Yong-gang HUANG Liu |
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| Institution: | 1.College of Applied Mathematics and Physics, Beijing Polytechnic University, Beijing 100022, China; 2.Institute of Semiconductors, CAS, Beijing 100083, China |
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| Abstract: | Proceeding from the SI-GaAs's energy level structure, the feasibility of using the ion-implanted GaAs semiconductor material as a passive Q-switched unit of solid-state lasers is discussed. The dynamic characteristic of GaAs used as passive Q-switch device is investigated experimentally.In the experiment, flat-flat cavity was adopted and (Nd∶YAG) was pumped by a xenon lamp,and the Q-switched waveform of 62ns single pulse width was obtained at repetition rate of 1Hz. |
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| Keywords: | GaAs passive Q-switched ion-implantation Nd∶YAG laser |
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