首页 | 本学科首页   官方微博 | 高级检索  
     


The structure of 32S I. Spectroscopy of highly-excited states
Authors:J. Brenneisen  B. Erhardt  F. Glatz  Th. Kern  R. Ott  H. Röpke  J. Schmälzlin  P. Siedle  B. H. Wildenthal
Affiliation:1. Fakult?t für Physik, Universit?t Freiburg, Hermann-Herder-Strasse 3, D-79104, Freiburg, Germany
2. Physics Program, School of Natural Sciences and Mathematics, The University of Texas at Dallas, Richardson, TX, 75083, USA
Abstract:Assignments of I, π, T are made to 30 levels in 32S between 7.35 and 11.76 MeV excitation energy, making the spectroscopy of the T= 0 states rather complete up to 10 MeV and that of the T = 1 states up to 12 MeV. A reassessment of existing data in the light of the new results clarifies the spectrum of I π = 1+, T = 1 states up to 15 MeV excitation energy. High-spin states (I = 52 - 7) below 10 MeV excitation energy have been investigated by n t γ angular-correlation measurements with the 29Si(α, nγ) reaction at E α 14.4 MeV. Five g-wave resonances of the 31P(p, γ) reaction, leading to the formation of I π + 4+, 5+ states in 32S, have been identified between 10 and 12 MeV excitation energy. The spectrum of T = 1 states between 10.7 and 12 MeV, has been investigated by measurements of γ-ray angular distributions on resonances of the 31P(p, γ) reaction and by measurements of resonance strengths. Several 32S levels between 7.35 and 8.75 MeV excitation energy were studied as final states in resonance decays. Finally a search was performed for I π = 0+ resonances of the 28Si(α, γ) reaction.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号