| 新结构电致发光薄膜器件的发光区域 |
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| 引用本文： | 陈立春,王向军.新结构电致发光薄膜器件的发光区域[J].发光学报,1995,16(3):199-204. |
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| 作者姓名： | 陈立春 王向军 |
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| 作者单位： | 1. 天津大学精密仪器系博士后流动站, 天津 300072;2. 天津理工学院材料物理研究所, 天津 300191 |
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| 基金项目： | 天津市21世纪青年基金,天津市高教局重点学科,国家自然科学基金 |
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| 摘 要： | 在发光层中插入无发光中心的ZnS薄膜,研究了新结构器件发光层中发光中心周围的广的分布与发光中心在薄膜中位置的关系,确定在SiO2/ZnS:Tb界面附近区域的发光中心周围有较多的F,远离该界面区域的发光中心周围的F-离子较少,前一区域的发光中心的发光亮度较低,后一区域的发光中心的发光亮度较高,并拟合出前一区域的厚度为18nm.
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| 关 键 词： | 发光区域 薄膜 电致发光 |
| 收稿时间： | 1994-06-06 |
| 修稿时间： | 1995-01-03 |
THE LUMINESCENT REGION IN NEW DESIGNED TFEL DEVICE |
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| Chen Lichun,Wang Xiangjun,Xu Xurong,Yao Jianquan.THE LUMINESCENT REGION IN NEW DESIGNED TFEL DEVICE[J].Chinese Journal of Luminescence,1995,16(3):199-204. |
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| Authors: | Chen Lichun Wang Xiangjun Xu Xurong Yao Jianquan |
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| Institution: | 1. The Precision Instrument Department, The University of Tian jin, Tianjing, Tianjin 300072;2. Material Physics Institute, Tianjin Institute of Technology, Tianjin 300191 |
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| Abstract: | he lumlnescent properties at dlfferentreglon In the new designed devices were studied.According tothe lumlnescence spectra of different devices the result can be given that there are more than three F ions surround the lumlnescent center Tb near SiO2/ZnS Interface and there is a few F-ions surround the lumlnescent centerfar from the Interface.By using the transfer charge date,we got the thickness of low efflcent reglon which Is about 18nm. |
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| Keywords: | emission region electrolumlnescence thin film |
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