Pseudogap effects on the c-axis charge dynamics in copper oxide materials

The c-axis charge dynamics of copper oxide materials in the underdoped and optimally doped regimes has been studied by considering the incoherent interlayer hopping. It is shown that the c-axis charge dynamics for the chain copper oxide materials is mainly governed by the scattering from the in-plane fluctuation, and the c-axis charge dynamics for the no-chain copper oxide materials is dominated by the scattering from the in-plane fluctuation incorporating with the interlayer disorder, which would be suppressed when the holon pseudogap opens at low temperatures and lower doping levels, leading to the crossovers to the semiconducting-like range in the c-axis resistivity and the temperature linear to the nonlinear range in the in-plane resistivity. Received 29 July 1999 and Received in final form 24 January 2000