钛－镍－硅固相反应形成的镍硅化物/n-硅(100)接触的I-V-T研究

在不同退火温度下，有一薄层钛覆盖层的镍－硅经过固相反应生成了镍硅化物/n-硅(100)接触，研究了其在80K到室温的电流－电压（I-V）特性。低温I-V曲线在低偏压区的电流显著地比传统的热电子发射（TE）模型预计的要大。用基于Tung的夹断模型简化得到的双肖特基势垒模型分析了实测的I-V曲线，从中可以得到肖特基势垒不均匀性的量度。较高温度退火导致较大的势垒不均匀性，意味着硅化物薄膜均匀性的变坏。钛覆盖薄层可以稍微提高硅化镍的相转变温度，以及形成的一硅化镍的热稳定性。

I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction

The current--voltage (I--V) characteristics of Ni silicide/n-Si(100) contacts,which were formed from solid-state reaction of Ni--Si with a thin Ti capping layer at different annealing temperatures, were measured at temperatures ranging from 80K to room temperature. The low temperature I--V curves exhibit an excess current at the low bias region which is significantly larger than that predicted by the traditional thermionic emission (TE) model. A double-Schottky barrier height (SBH) model simplified from Tung's pinch-off model is used to analyse the measured I--V curves, from which the extent of the SBH inhomogeneity can be extracted. Higher annealing temperature results in larger SBH inhomogeneity, implying the degradation of the silicide film uniformity. The thin Ti capping layer increases slightly both the NiSi phase transfer temperature and the thermal stability of the formed NiSi film.