| S频段大功率振荡用砷化镓场效应晶体管的微波性能 |
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| 引用本文： | 王福臣.S频段大功率振荡用砷化镓场效应晶体管的微波性能[J].固体电子学研究与进展,1992(4). |
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| 作者姓名： | 王福臣 |
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| 作者单位： | 南京电子器件研究所 210016 |
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| 摘 要： | 对WC76型S频段大功率振荡用砷化镓场效应晶体管的微波性能作了介绍。文中给出了测试振荡器的设计。测试结果表明,WC76型振荡管在s频段的微波性能良好,振荡频率在3GHz左右时,输出功率可达3.5w,直流—射频转换效率可达44％,而且在2～4GHz的整个S频段均能满意地工作。
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| 关 键 词： | 砷化镓场效应晶作管 功率场效应晶体管 微波振荡器 |
The Microwave Performance of S Band High Power GaAs FET for Oscillation Application |
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| Wang Fuchen.The Microwave Performance of S Band High Power GaAs FET for Oscillation Application[J].Research & Progress of Solid State Electronics,1992(4). |
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| Authors: | Wang Fuchen |
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| Abstract: | The microwave performance of an S band high power GaAs FET for oscillation application produced by Nanjing Electronic Devices Institute is described. The design of the device test oscillator is also presented. It is shown that the oscillation power output and the DC-RF coversion efficiency of this FET at about 3. 0GHz are up to 3. 5 W and 44%, respectively. This FET can satisfactorily operate over the whole S frequency band. |
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| Keywords: | GaAs FET Power FET Microwave Oscillator |
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