Computational study of the properties of silicon thin films on graphite |
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Authors: | Galashev A. E. Ivanichkina K. A. |
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Affiliation: | 1.Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620990, Russia ; |
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Abstract: | Russian Journal of Physical Chemistry A - The behavior of two thin silicon films on a surface of perfect graphite is studied by means of molecular dynamics. One film is a five-layer section of... |
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