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MOVPE growth of InP/GaInAs and GaAs/GaInP heterostructures for electronic transport applications |
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| Authors: | N Carlsson S Anand S -B Carlsson B Gustafson P Omling P Ramvall L Samuelson W Seifert Q Wang |
| Institution: | Department of Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden |
| Abstract: | The influence of the layer structure on the electrical properties in (i) modulation doped InP/GaInAs quantum well samples, and, (ii) GaAs/GaInP resonant tunneling diodes has been investigated. The results reveal the importance of the different scattering processes. In particular, the influence of interface roughness scattering has been evaluated for both types of structures. |
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