Optical properties of narrow high quality GaAs/AlGaAs quantum wells grown by MOVPE |
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| Authors: | M.-E. Pistol S. Nilsson P. Silverberg L. Samuelson M. Rask G. Landgren |
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| Affiliation: | 1. IBM Group, CSIR – Central Building Research Institute, Roorkee-247667, India;2. Department of Chemical Engineering, Indian Institute of Technology, Roorkee 247667, India |
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| Abstract: | We report optical characterization of high quality quantum well (QW) structures grown by metal-organic vapour-phase epitaxy (MOVPE). Thin QW layers of GaAs of thicknesses between 20 Å and 80 Å inserted between Al0.36Ga0.64 As confining layers as well as nominally 20 Å QW's in AlxGa1−xAs with varying x have been studied. Exciton confinement energies exceeding 250 meV and a FWHM of 6 meV for the thinnest QW have been observed. The photoluminescence (PL) data allows the observation of monolayer fluctuations in the QW widths and indicates an interface abruptness of about one atomic layer. Photoluminescence excitation spectroscopy allows electronic excited states to be seen. |
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