Optical and electrical properties of the wide gap,n-type semiconductors: ZnBi2O6 and MgBi2O6 |
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| Authors: | Mizoguchi Hiroshi Bhuvanesh Nattamai S P Woodward Patrick M |
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| Affiliation: | Dept. of Chemistry, Ohio State University, 100 West 18th Ave., Columbus, OH 43210-1185, USA. |
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| Abstract: | Characterization of polycrystalline samples of the trirutile oxides ZnBi2O6 and MgBi2O6 reveals temperature independent conductivity (0.4 and 0.01 S cm(-1)), a negative Seebeck coefficient (-0.035 and -0.025 mV K(-1)), and an optical band gap that falls at the low energy end of visible region (1.7 and 1.8 eV), this combination of attributes, indicating that these compounds are degenerate n-type semiconductors, has not previously been observed in a Bi(5+) oxide. |
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