Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films |
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| Authors: | Tomáš Řičica Tomáš Světlík Dr. Libor Dostál Prof. Aleš Růžička Dr. Květoslav Růžička Dr. Ludvík Beneš Prof. Petr Němec Dr. Marek Bouška Dr. Roman Jambor |
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| Affiliation: | 1. Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Pardubice, Czech Republic;2. Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Pardubice, Czech Republic;3. Department of Physical Chemistry, Institute of Chemical Technology Prague, Prague 6, Czech Republic |
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| Abstract: | Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L1Ga(μ‐S)]3 ( 1 ) and [L2Ga(μ‐S)]2 ( 2 ) containing either N,C,N‐ or C,N‐chelating ligands L1 or L2 (L1 is {2,6‐(Me2NCH2)2C6H3}? and L2 is {2‐(Et2NCH2)‐4,6‐tBu2‐C6H2}?). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L1Ga(κ2‐S4) ( 3 ) was prepared and the unprecedented complex [{2‐[CH{(CH2)3CH3}(μ‐OH)]‐6‐CH2NMe2}C6H3]GaS ( 4 ) was also isolated as the minor by‐product of the reaction. Compounds 1 – 3 were further studied as potential single‐source precursors for amorphous GaS thin film deposition by spin‐coating. |
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| Keywords: | Group 13 elements NMR spectroscopy spin coating thin-layer films |
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