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Formation of InP nanoparticles by laser ablation in an aqueous environment
Affiliation:1. Department of Physics, University of Missouri-Kansas City, Kansas City, MO 64110, USA;2. Department of Oral Biology, University of Missouri-Kansas City, Kansas City, MO 64110, USA;1. Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia, Bulgaria;2. Rostislaw Kaischew Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev str., Bl.11, 1113 Sofia, Bulgaria;3. Dipartimento di Fisica, Università di Napoli Federico II, Via Cintia, I-80126 Napoli, Italy;4. CNR-SPIN UOS Napoli, Via Cintia, I-80126 Napoli, Italy;1. College of Electrical and Information Engineering, Lanzhou University of Technology, Lanzhou 730050, People’s Republic of China;2. Key Laboratory of Gansu Advanced Control for Industrial Processes, Lanzhou University of Technology, Lanzhou 730050, People’s Republic of China;3. National Demonstration Center for Experimental Electrical and Control Engineering Education, Lanzhou University of Technology, Lanzhou 730050, People’s Republic of China;4. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People’s Republic of China;5. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China;6. Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China;7. The First Primary School of Hexipu Town, Yongchang County, Gansu Province 737202, People’s Republic of China;8. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People’s Republic of China;1. Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany;2. Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, Campus Río San Pedro, 11510 Puerto Real, Spain;1. Veeco Instruments Inc., 394 Elizabeth Ave., Somerset, NJ 08873, USA;2. North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC, USA
Abstract:Indium phosphide (InP) semiconductor nanoparticles were obtained by laser ablation of a crystalline wafer in water. The transmission electron microscopy micrographs of the nanoparticles show that their size is in the range of 100 nm. In the Raman spectrum of the nanoparticles, the characteristic peaks of InP have been observed in the vicinity of 300 and 340 cm−1. The binding energies as measured from the X-ray photoemission spectra are consistent with values for InP crystal as well as indium oxides.
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