Application of XAFS spectroscopy to studying the microstructure and electronic structure of quantum dots |
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| Authors: | S B Erenburg N V Bausk A V Dvurechenskii Zh V Smagina A V Nenashev A I Nikiforov V G Mansurov K S Zhuravlev A I Toropov |
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| Institution: | (1) Nikolaev Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia;(2) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
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| Abstract: | Variations in the microscopic structural parameters of semiconductor nanoclusters (interatomic distances, coordination numbers, and types of neighboring atoms) under variation of the preparation conditions of Ge/Si, GaN/AlN, and InAs/AlAs heterostructures are determined by the EXAFS-and XANES spectroscopy methods. The effect of preparation conditions on interphase diffusion and structure parameters in semiconductor nanoclusters is revealed. The effect of the temperature of synthesis at different stages, the substrate orientation and pretreatment, the composition of the molecular beam (in particular, the presence of Ge+ cations) on the local composition of nanostructures is studied. Relations between the size and shape of nanoparticles and their local spatial characteristics (interatomic distances, stoichiometric composition, and phase boundary characteristics) are examined. |
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