Photoluminescence of n-doped double quantum well—electron subbands under influence of in-plane magnetic fields |
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| Authors: | M Orlita M Byszewski GH Dhler M Grill P Hlídek S Malzer M Zvra |
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| Institution: | aFaculty of Mathematics and Physics, Institute of Physics, Charles University, Ke Karlovu 5, CZ-121 16 Prague 2, Czech Republic;bGrenoble High Magnetic Field Laboratory, Boîte Postale 166, F-38042 Grenoble Cedex 09, France;cMax-Planck-Research Group, Institute of Optics, Information and Photonics, Universität Erlangen-Nürnberg, D-91058 Erlangen, Germany |
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| Abstract: | We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high magnetic fields. Measurements were carried out on a selectively contacted symmetric p-δn-DQW-δn-p structure, which allows a variation of the electron density in DQW by a p–n bias and simultaneously a tilting of DQW, when a p–p bias is applied. Attention was paid to phenomena in in-plane magnetic fields, theoretically studied by Huang and Lyo (HL), Phys. Rev. B 59, (1999) 7600]. In this paper, we compare our results for both symmetric and asymmetric DQWs with the theoretical model made by HL. Whereas the spectra from a symmetric DQW fully confirmed the theoretical predictions, the results gained from DQW with an electric-field-induced asymmetry did not allow a proper study of anticipated effects. The reasons for that are discussed. |
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| Keywords: | Double quantum well In-plane magnetic field Luminescence |
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