| 采用双阈值配置的抗老化N型多米诺或门 |
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| 引用本文： | 易茂祥,丁力,张林,李扬,黄正峰.采用双阈值配置的抗老化N型多米诺或门[J].微电子学,2017,47(4):499-504. |
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| 作者姓名： | 易茂祥 丁力 张林 李扬 黄正峰 |
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| 作者单位： | 合肥工业大学 电子科学与应用物理学院, 合肥 230009,合肥工业大学 电子科学与应用物理学院, 合肥 230009,合肥工业大学 电子科学与应用物理学院, 合肥 230009,江苏商贸职业学院 电子信息系, 江苏 南通 226000,合肥工业大学 电子科学与应用物理学院, 合肥 230009 |
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| 基金项目： | 国家自然科学基金资助项目(61371025,61574052)；南通市应用基础研究科技计划资助项目(GY12015037) |
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| 摘 要： | N型多米诺或门是高性能集成电路常用的动态单元,负偏置温度不稳定性(NBTI)引起的PMOS管老化问题已成为降低多米诺或门电路可靠性的主要因素之一。仿真分析表明,N型多米诺或门中各种PMOS管受NBTI的影响有明显差别。针对这种差异,提出一种双阈值配置的抗老化多米诺或门。对电路老化起关键作用的保持PMOS管和反相器PMOS管采用低阈值电压设计。仿真结果表明,在保证噪声容限和功耗的条件下,该双阈值配置PMOS管的多米诺或门在10年NBTI老化后仍有0.397%的时序余量。
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| 关 键 词： | 负偏置温度不稳定性 多米诺或门 抗老化 双阈值配置 时序余量 |
| 收稿时间： | 2016/10/24 0:00:00 |
Anti-Aging N-Type Domino OR Gate Using Dual Threshold Configuration |
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| YI Maoxiang,DING Li,ZHANG Lin,LI Yang and HUANG Zhengfeng.Anti-Aging N-Type Domino OR Gate Using Dual Threshold Configuration[J].Microelectronics,2017,47(4):499-504. |
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| Authors: | YI Maoxiang DING Li ZHANG Lin LI Yang and HUANG Zhengfeng |
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| Institution: | School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China,School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China,School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China,Department of Electronics and Information, Jiangsu Vocational College of Business, Nantong, Jiangsu 226000, P.R.China and School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China |
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| Abstract: | The N-type domino OR gate is widely used for designing the dynamic element of high performance integrated circuits, one major reliability concern of which is NBTI induced PMOS transistor aging. It was found that the obvious differences existed among the PMOS transistors affected by NBTI in N-type domino OR gates, based on which a new domino OR gate design scheme using double threshold PMOS transistors configuration was presented. The keeper and inverter PMOS transistors, which were critical for circuit aging, were configured with low threshold voltages. The simulation results showed that the domino OR gate with double threshold configuration had still 0.397% timing margin after 10 years NBTI aging, while ensuring good noise and power consumption performances. |
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| Keywords: | NBTI Domino OR gate Anti-aging Dual threshold configuration Timing margin |
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