Ultrashort-laser-pulse-driven rewritable phase-change optical recording in Sb-based films |
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Authors: | J Solis CN Afonso |
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Affiliation: | (1) Instituto de Optica, CSIC, Serrano 121, 28006 Madrid, Spain, ES |
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Abstract: | This paper reviews the work we have carried out over the last years on the development of ultrashort-laser-pulse-driven, rewritable,
phase-change optical memories. The materials we have tailored for this application are non-stoichiometric, Sb-rich amorphous
thin films, which can be crystallized upon irradiation with ultrashort laser pulses, showing a large optical contrast upon
transformation. This result makes them very promising for the development of rewritable phase-change optical memories under
ultrashort pulses, since the reversibility of the process has also been demonstrated. Adequate control of the heat-flow conditions
has allowed us to achieve a full transformation time faster than 400 ps for crystallization/amorphization using 30-ps pulses.
The crystallization threshold fluence has been found to decrease upon irradiation with pulses shorter than 800 fs, thus suggesting
the relevance of high-electronic-excitation-induced processes in the amorphous-to-crystalline phase transition. This has been
confirmed by the observation of an ultrafast, non-thermal phase transition occurring 200–300 fs after the arrival of the laser
pulse at the surface, for fluences above the crystallization threshold. The presence of this transient phase conditions the
final state induced therefore enabling the applicability of this material as a rewritable recording medium using femtosecond
pulses.
Received: 11 October 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002
RID="*"
ID="*"Corresponding author. Fax: +34-91/564-5557, E-mail: J.Solis@io.cfmac.csic.es |
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Keywords: | PACS: 42 70 Ln 78 47 +p 61 80 Ba |
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