| MOSFET器件回顾与展望(下) |
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| 引用本文： | 肖德元,夏青,陈国庆.MOSFET器件回顾与展望(下)[J].半导体技术,2007,32(1):1-5,25. |
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| 作者姓名： | 肖德元 夏青 陈国庆 |
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| 作者单位： | 1. 中芯国际集成电路(上海)有限公司,存储器技术发展中心,上海,201203
2. 上海第二工业大学,上海,201209 |
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| 基金项目： | 上海市市级技术研发中心浦东新区科技局匹配资助项目 |
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| 摘 要： | 介绍了新颖的MOS器件结构及鳍状FET器件研究最新进展, 比较了几种主要新颖半导体器件的特性,指出了MOSFET尺寸缩小所面临的巨大挑战及解决办法,展望了器件未来发展趋势.
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| 关 键 词： | 金属氧化物半导体场效应管 微电子学 鳍状 MOSFET 器件结构 Device Perspective 趋势 发展 尺寸 特性 半导体 比较 研究 |
| 文章编号： | 1003-353X（2007）01-0001-05 |
| 修稿时间： | 2006-05-26 |
History and Perspective of MOSFET Device(Ⅱ) |
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| XIAO De-yuan,XIA Qing,CHEN Guo-qing.History and Perspective of MOSFET Device(Ⅱ)[J].Semiconductor Technology,2007,32(1):1-5,25. |
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| Authors: | XIAO De-yuan XIA Qing CHEN Guo-qing |
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| Institution: | 1. Memory Technology Development Center, Semiconductor Manufacturing International ( Shanghai |
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| Abstract: | The progress of the novel MOSFET development and the most advanced MOSFET structure as well as the fin FET device structure were introduced. Comparison on the characteristics of several new devices was given, the great challenges and the solutions to the MOSFET scaling down were also described, the device developing trends were viewed. |
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| Keywords: | MOSFET microelectronics fin |
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