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Current-voltage characteristics of thin Ge2Sb2Te5 films taken using a measuring circuit with a current source |
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| Authors: | S A Fefelov L P Kazakova S A Kozyukhin K D Tsendin D Arsova V Pamukchieva |
| Institution: | 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia 2. Kirov State Forestry Engineering University, Institutskii per. 5, St. Petersburg, 194021, Russia 4. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia 3. Institute of Solid State Physics, Bulgarian Academy of Sciences, Tsarigradskoe sh. 72, Sofia, 1784, Bulgaria |
| Abstract: | The measuring circuit with a voltage generator, which is traditionally used for studying electric properties of glasslike semiconductors, is compared with an alternative version using a current generator. The results obtained in the latter case reflect the interrelation between the memory formation effect and changes in the electrical parameters more comprehensively. A new electric parameter, viz. hold voltage U hold, which has not been described earlier, is introduced. The relation between U hold and the memory formation process during the phase transition is established. The effect of emergence of oscillations in the current-limiting regime in the conduction channel in the film is detected. |
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