Temporal dynamics of impurity photoconductivity in n-GaAs and n-InP |
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| Authors: | V. Ya. Aleshkin D. I. Burdeinyi |
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| Affiliation: | 1. Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Akademicheskaya 7, Afonino, Nizhni Novgorod oblast, 607680, Russia
2. Lobachevsky State University of Nizhni Novgorod-National Research University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia
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| Abstract: | The dynamics of impurity photoconductivity in n-GaAs and n-InP under photoexcitation with a short light pulse has been calculated. It has been shown that the photoconductivity dynamics in a nanosecond time range is determined by cooling of electrons, while the role of cascade capture of electrons by impurity is insignificant in this range. A nonmonotonic time dependence of photoconductivity caused by the competition between different relaxation mechanisms of the electron pulse has been predicted. |
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