Appearance conditions for a semiconducting-substrate-induced gap in the density of states in epitaxial graphene |
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| Authors: | S. Yu. Davydov |
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| Affiliation: | 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
2. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics, Kronverkskii pr. 49, St. Petersburg, 197101, Russia
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| Abstract: | The density of states in a semiconducting substrate is described with a model assuming a parabolic electronic spectrum. Analytical criteria for the appearance of a gap (gaps) in the density of states in epitaxial graphene are derived, and its (their) parameters (width and position relative to the forbidden gap of the substrate) are found. A way to experimentally verify analytical data is suggested. |
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