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Charge carrier accumulation and relaxation effects in the active region of polymer and composite (polymer-gold nanoparticles) field-effect transistor structures |
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| Authors: | P. A. Dement’ev M. S. Dunaevskii A. N. Aleshin A. N. Titkov I. V. Makarenko |
| Affiliation: | 1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia 2. St. Petersburg Electrotechnical University “LETI,”, ul. Professora Popova 5, St. Petersburg, 197376, Russia |
| Abstract: | The charge carrier accumulation and relaxation effects in the active region of polymer field-effect transistor structures based on the semiconducting polymer poly(9-epoxypropylcarbazole) have been studied by means of Kelvin probe microscopy. It has been shown that the introduction of gold nanoparticles into the polymer noticeably accelerates the processes considered. The characteristic times of charge accumulation and dissipation upon the application and removal of the potential at the transistor gate in this case are of a few minutes. |
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