Structural and phase changes in single-crystalline silicon treated with compression plasma flows

The structural-phase changes in p-type single-crystalline silicon treated with compression plasma flows (CPFs) with an energy density of 5–12 J/cm² are investigated by the X-ray diffraction method depending on the crystallographic orientation of the silicon and the plasma energy density. In addition, the conductivity type on the treated silicon surface is determined by means of measuring the sign of the thermopower.; the surface morphology, by scanning electron microscopy; and the open-circuit voltage, upon illumination of the treated silicon surface (AM1.5 spectrum). It is found that treatment with CPFs results in the occurrence of the photovoltaic effect conditioned by the formation of an n-type modified surface layer. Depending on the crystallographic orientation, the modified layer either remains single crystalline (for the initial orientation (111)) or is subjected to amorphization (for the initial orientation (100)). At an energy density of ～8–9 J/cm² the action of CPFs leads to texture formation on the silicon surface.