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多线切割工艺中切割速度对晶片翘曲度的影响
引用本文:赵文华,马玉通,杨士超.多线切割工艺中切割速度对晶片翘曲度的影响[J].电子工业专用设备,2011,40(9):28-30.
作者姓名:赵文华  马玉通  杨士超
作者单位:中国电子科技集团公司第四十六研究所,天津,300220
摘    要:目前,半导体单晶材料的加工多采用多线切割机进行切割。切割工艺直接影响着切割过后晶片的参数。在这些参数中,翘曲度是鉴别晶片几何参数好坏的重要指标之一。影响翘曲度的因素很多,如切割速度、砂浆密度、晶片内部应力等,在切割工序中,通过调整多线切割的工艺条件,来控制和改善晶片的翘曲度。

关 键 词:多线切割  翘曲度  切割速度

A Basic Study on the Relation between Cutting Speeds and Wafer warp
Zhao Wenhua,Ma Yutong,Yang Shichao.A Basic Study on the Relation between Cutting Speeds and Wafer warp[J].Equipment for Electronic Products Marufacturing,2011,40(9):28-30.
Authors:Zhao Wenhua  Ma Yutong  Yang Shichao
Institution:(The 46th Research Institute of CETC,Tianjin 300220,china)
Abstract:At present,the multi-wire saw machine is widely used in cutting silicon material field.The cutting speed take the most important role in the cutting,Different cutting speed may affect the geometry parameters of the wafer.And different cutting speed may change the quality of the wafer was mainly studied in this article.
Keywords:Much wire cutters  Warp  The cutting speeds
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