Quenching of photoluminescence in conjugates of quantum dots and single-walled carbon nanotube

Development of quantum dot (QD) based device components requires controlled integration of QDs into different photonic and electronic materials. In this regard, introduction of methods for regular arrangement of QDs and investigation of properties of QD-based assemblies are important. In the current work we report (1) controlled conjugation of CdSe-ZnS QDs to sidewall-functionalized single-walled carbon nanotube (SWCNT) templates (2) and the effect of conjugation of QDs to SWCNT on the photoluminescence (PL) properties of QDs. We identified that PL intensity and lifetime of QDs are considerably reduced after conjugation to SWCNT. The origin of the quenching of the PL intensity and lifetime was discussed in terms of F?rster resonance energy transfer (FRET). FRET involves nonradiative transfer of energy from a photoexcited QD (energy donor) to a nearby SWCNT (energy acceptor) in the ground state. This was examined by varying the density of QDs on SWCNT and conjugating smaller and bigger QDs to the same SWCNT. We estimated the FRET efficiency in QD-SWCNT conjugates from the quenching of the PL intensity and lifetime and identified that FRET is independent of the density and type of QDs on SWCNT but inherent to QD-SWCNT conjugates.