The density of states and band edge shift of undoped ferromagnetic semiconductors. Real spin 7/2期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

The density of states and band edge shift of undoped ferromagnetic semiconductors. Real spin 7/2

Authors:	M. Matlak A. Ramakanth

Affiliation:	(1) Institut für Theoretische Physik II, Westfälische Wilhelms Universität, Domagkstrasse 75, D-4400 Münster, Federal Republic of Germany;(2) Present address: Instytut Fizyki, Uniwersytet lski w Katowicach, Uniwersytecka 4, PL-40 007 Katowice, Poland;(3) Present address: Department of Physics, Kakatiya University, 506009 Warangal, India

Abstract:	The perturbation approach for the real spinS=7/2 has been used to study the conduction band density of states for europium chalcogenides starting from the exact atomic limit Green functions. The density of states for an empty conduction band shows the multi-band structure and is temperature dependent. The shift of the optical absorption edge (rs) as a function of temperature has been obtained for EuO and EuS. The results agree relatively well with experiments on EuO. It is shown that thes-f coupling constant is universal for EuO, EuS and EuSe (ferromagnetic phase).

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