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脉冲激光器大电流窄脉冲驱动设计
引用本文:陈伟,苗琪媚,孙峰,赵翔. 脉冲激光器大电流窄脉冲驱动设计[J]. 强激光与粒子束, 2010, 22(6). DOI: 10.3788/HPLPB20102206.1223
作者姓名:陈伟  苗琪媚  孙峰  赵翔
作者单位:1. 华中光电技术研究所 武汉光电国家实验室, 武汉 430074; 2. 武汉工程大学 化工与制药学院化学工程系, 武汉 430074
基金项目:船舶工业国防科技应用、基础研究基金 
摘    要:介绍了利用金属氧化物场效应管产生大电流窄脉冲来驱动激光二极管的原理,推导出驱动金属氧化物场效应管峰值驱动电流的计算公式和开通时间的估算公式,通过仿真总结出影响驱动电源脉冲电流的脉宽、幅度和振荡的主要因素,理论和仿真结果表明,器件的寄生电感、电路走线电感和负载寄生电感对电流影响较大。实验结果显示,在供电高压为200 V时,金属氧化物场效应管开通时间为2 ns;激光二极管驱动电流上升时间小于10 ns,脉宽为15~100 ns,幅度为0~50 A连续可调,频率为0~50 kHz。

关 键 词:脉冲激光二极管  金属氧化物场效应管  驱动电源  驱动电流  开通时间
收稿时间:1900-01-01;

Design of high current narrow width pulsed power supply of laser diode
Cheng Wei,Miao Qimei,Sun Feng,Zhao Xiang. Design of high current narrow width pulsed power supply of laser diode[J]. High Power Laser and Particle Beams, 2010, 22(6). DOI: 10.3788/HPLPB20102206.1223
Authors:Cheng Wei  Miao Qimei  Sun Feng  Zhao Xiang
Affiliation:1. Wuhan National Laboratory for Optoelectronics, Huazhong Institute of Electro-Optics, Wuhan 430074, China; 2. Department of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan 430074, China
Abstract:The principle of high power MOSFET generating high-current narrow-width pulses to drive laser diode is theoretically analyzed, and the formula of MOSFET gate drive current and the estimation formula of MOSFET drive rise time are obtained. The key factors which influence the laser diode(LD) power supply current width, amplitude and oscillation are summarized through simulation. Theory and simulation show that components stray inductance, circuit routing inductance and load inductance influence the drive current greatly. Experiment results show that the MOSFET switch-on time is about 2 ns at the drain-source voltage of 200 V. The LD drive power supply’s pulse current possesses a rise-time less than 10 ns, with the pulse width, amplitude and frequency ranging in 15~100 ns, 0~50 A and 0~5
Keywords:MOSFET  drive power supply  drive current  switch-on time
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