| 饱和吸附H原子的Si（100）表面的光学二次谐波研究 |
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| 引用本文： | 蒋红兵 刘杨华. 饱和吸附H原子的Si（100）表面的光学二次谐波研究[J]. 光学学报, 1995, 15(3): 77-380 |
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| 作者姓名： | 蒋红兵 刘杨华 |
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| 作者单位： | 三束材料改性国家重点实验室复旦大学分部，复旦大学物理系 |
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| 摘 要： | 测量了Ｓｉ（１００）（２×１）－Ｈ表面和Ｓｉ（１００）（３×１）－Ｈ表面的反射二次谐波强度随温度的变化关系，并与清洁的Ｓｉ（１００）（２×１）表面进行了比较。Ｓｉ（１００）（２×１）表面和Ｓｉ（１００）（３×１）－Ｈ表面的二次谐波强度随温度的上升而单调地减小，Ｓｉ（１００）（２×１）－Ｈ表面二次谐波强度随温度的变化不是单调的，约在４７０Ｋ时信号最大。可以根据二次谐波信号的强度及其随温度的变化关系来确定样品温度和表面结构。
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| 关 键 词： | 光学二次谐波 Si（100）表面 H原子 饱和吸附 |
| 收稿时间： | 1994-03-06 |
Studies on H-Terminated Si(100)Surfaces by Second Harmonic Generation |
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| Jiang Hongbing,Liu Yanghua,Lu Xingze,Wang Wengcheng,Zheng Jiabiao. Studies on H-Terminated Si(100)Surfaces by Second Harmonic Generation[J]. Acta Optica Sinica, 1995, 15(3): 77-380 |
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| Authors: | Jiang Hongbing Liu Yanghua Lu Xingze Wang Wengcheng Zheng Jiabiao |
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| Abstract: | In this paper, we report out experimental results of optical second harmonic generation from clean Si(100)2×1),Si(100)(2×1)-H and Si(100)(3×1)-H surfaces.For the clean Si(100)-(2×1)surface and the Si( 100)(3×1)-H surface,the second harmonic Intensity decreased monotonlcall with increasing temperature.For the(2 ×1) monohydride Si(100)surface,the second harmonic intensity varied on the temperature not monotonkically,but has the maximum at about 470 K.Structure and sample temperature could be monitored by the second harmonic intensity and the tempeerature dependence of second harmonic intensity. |
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| Keywords: | optical second hramonic generation Si(100)(2×1)-H surface |
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