Current transport characteristics of SiGeC/Si heterojunction diode |
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| Authors: | Chen F Orner BA Guerin D Khan A Berger PR Ismat Shah S Kolodzey J |
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| Institution: | Dept. of Electr. Eng., Delaware Univ., Newark, DE ; |
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| Abstract: | The characteristics of heterojunction diodes fabricated from p-type epitaxial Si0.07Ge0.91C0.02 alloy grown by molecular beam epitaxy on n-type Si(100) have been examined by using current-voltage, capacitance-voltage, and Hall effect measurements. The SiGeC/Si heterojunction diode shows good rectification with nearly ideal forward bias behavior and low reverse leakage currents compared to Ge/Si heterojunction diodes. The temperature dependence of the current-voltage behavior indicates that the principle conduction mechanism is by electron injection over a barrier. Reverse breakdown occurs by the avalanche mechanism |
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