| 193nm光刻曝光系统的现状及发展 |
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| 引用本文： | 巩岩,张巍.193nm光刻曝光系统的现状及发展[J].中国光学与应用光学,2008,1(1):25-35. |
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| 作者姓名： | 巩岩 张巍 |
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| 作者单位： | 中国科学院 长春光学精密机械与物理研究所 应用光学国家重点实验室 |
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| 基金项目： | “十一五”国家02专题资助项目. |
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| 摘 要： | 投影曝光工艺是集成电路制造过程中的关键环节，曝光系统的工艺水平已成为衡量微电子制造技术的重要标志。重点介绍了目前193nm光刻设备曝光系统的发展现状和趋势，以及为提高曝光质量所采用的相关分辨率增强技术；通过分析曝光系统的构成和其中的关键技术，探讨了国内研制相关曝光设备所面临的挑战。
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| 关 键 词： | 投影光刻 曝光系统 分辨率增强 照明 投影物镜 综述 |
| 收稿时间： | 2008-04-20 |
| 修稿时间： | 2008-07-14 |
Present status and progress in 193 nm exposure |
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| Authors: | GONG Yan ZHANG Wei |
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| Institution: | State Key Laboratory of Applied Optics,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences |
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| Abstract: | Lithographic exposure is the key process in the manufacture of integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. In this paper, the present status and progress in 193 nm exposure system are described. The resolution enhancement technologies widely used in 193 nm lithography, such as off axis illumination, phase shifting mask and optical proximity correction, are also introduced. By showing the composition and key technologies of the exposure system, the challenges in development of lithography instrument are discussed. |
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| Keywords: | projection lithography exposure system resolution enhancement technology illumination projection lens review |
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