| Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films |
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| 作者姓名： | 顾四朋 侯立松 赵启涛 黄瑞安 |
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| 作者单位： | Shanghai Institute of Optics and Fine Mechanics，Chinese Academy of Sciences，Shanghai 201800 Department of Physics，New Jersey Institute of Technology，Newark，NJ 07102，USA，Shanghai Institute of Optics and Fine Mechanics，Chinese Academy of Sciences，Shanghai 201800，Shanghai Institute of Optics and Fine Mechanics，Chinese Academy of Sciences，Shanghai 201800，Shanghai Institute of Optics and Fine Mechanics，Chinese Academy of Sciences，Shanghai 201800 |
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| 基金项目： | They alsogratefully acknowledge the financial support by the National Natural Science Foundation of China under Grant No. 59832060. S. Gu's e-mail address is spgu@siom.ac.cn. |
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| 摘 要： | To improve the optical storage performance, Sn was doped into Ge2Sb2Te5 phase change thin films. The optical and thermal properties of Sn-doped Ge2Sb2Te5 film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge2Sb2Te5 media.
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Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films |
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| Abstract: | To improve the optical storage performance, Sn was doped into Ge2Sb2Te5 phase change thin films. The optical and thermal properties of Sn-doped Ge2Sb2Te5 film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge2Sb2Te5 media. |
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