Specific features of the effect of annealing on the transmission spectra of GaP:N light-emitting diodes

The effect of annealing in a hydrogen atmosphere on the transmission spectra of GaP:N light-emitting diodes at temperatures of 550, 570, and 590 °C has been investigated. Temperature-induced rearrangement of defects has been observed. The band gap of the material studied is determined. The dependence of the transmission and difference transmission spectra on the annealing temperature and the effect of annealing on the electroluminescence spectra are shown.