A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP |
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| Authors: | D O Toginho Filho I F L Dias J L Duarte S A Loureno L C Poas E Laureto J C Harmand |
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| Institution: | a Departamento de Física, Universidade Estadual de Londrina, CP6001, CEP 86051-970, Londrina-Paraná, Brazil;b CNRS URA 250, Laboratoire CDP, 196 rue H. Ravera, 92220 Bagneux, France |
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| Abstract: | AlGaAsSb/AlAsSb Bragg mirrors lattice matched on InP with six pairs of layers were grown by molecular beam epitaxy. The effect of Te doping on the electrical and optical properties of the Bragg mirrors, and the presence of digital alloy gradient layers between the ternary and quaternary layers are analysed. The presence of digital alloy layers at the interfaces reduces the electrical resistance through the perpendicular direction of the Bragg mirror, without significantly affecting the reflectivity. |
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| Keywords: | semiconductors electrical conductance reflectance Bragg mirror |
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