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MoO3和SiO2掺杂对Ce0.8Nd0.2O1.9固体电解质结构和导电性能的影响
引用本文:赵桂春,周德凤,杨 梅,夏燕杰,孟 健.MoO3和SiO2掺杂对Ce0.8Nd0.2O1.9固体电解质结构和导电性能的影响[J].无机化学学报,2011,27(5):860-864.
作者姓名:赵桂春  周德凤  杨 梅  夏燕杰  孟 健
作者单位:1. 长春工业大学化学与生命科学学院,长春,130012
2. 中国科学院长春应用化学研究所,稀土资源利用国家重点实验室,长春130022
基金项目:国家自然科学基金(No.20871023,20671088); 吉林省科技发展计划(No.20070510,20101549)资助项目
摘    要:采用溶胶-凝胶法合成高纯(<50 mg·kg-1 SiO2)Ce0.8Nd0.2O1.9(NDC)和SiO2含量为500 mg·kg-1的Ce0.8Nd0.2O1.9(NDCSi)体系,将1mol%MoO3分别加入到NDC和NDCSi体系,比较研究MoO3掺杂对体系微观结构和电性能的影响。通过X射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)对材料进行表征,交流阻抗(AC)分析仪测试材料的电阻。结果表明:MoO3和SiO2的加入均没有破坏体系的立方莹石结构;MoO3掺杂能提高NDC和NDCSi陶瓷材料的致密度,提高其晶界电导率和总电导率;MoO3掺入NDC体系具有烧结助剂的作用,掺入NDCSi体系既具有烧结助剂的作用,又具有晶界改善剂的作用。

关 键 词:MoO3掺杂  烧结助剂  晶界改善剂  电导率

Effects of MoO3 and SiO2-dopant on Sintering and Electrical Properties of Ce0.8Nd0.2O1.9 Solid Electrolytes
ZHAO Gui-Chun,ZHOU De-Feng,YANG Mei,XIA Yan-Jie and MENG Jian.Effects of MoO3 and SiO2-dopant on Sintering and Electrical Properties of Ce0.8Nd0.2O1.9 Solid Electrolytes[J].Chinese Journal of Inorganic Chemistry,2011,27(5):860-864.
Authors:ZHAO Gui-Chun  ZHOU De-Feng  YANG Mei  XIA Yan-Jie and MENG Jian
Institution:School of Chemistry and Life Science, Changchun University of Technology, Changchun 130012, China,School of Chemistry and Life Science, Changchun University of Technology, Changchun 130012, China,School of Chemistry and Life Science, Changchun University of Technology, Changchun 130012, China,State Key Laboratory of Rare Earth Resource Utilization, Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China and State Key Laboratory of Rare Earth Resource Utilization, Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
Abstract:The Ce0.8Nd0.2O1.9(NDC) (<50 mg·kg-1 SiO2) and 500 mg·kg-1 SiO2 of Ce0.8Nd0.2O1.9(NDCSi) with and without 1mol% MoO3 systems were prepared by the so-gel method. The characterizations of samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and AC impedance spectroscopy. The XRD results showed that these materials were single phases with a cubic fluorite-type structure. The addition of MoO3 improved the densification for NDC and NDCSi. The grain boundary and total conductivity of NDC and NDCSi with 1mol% MoO3 systems increased. Therefore, MoO3 should be considered to be not only an effective sintering aid, but also a new scavenger of the grain boundary for NDCSi.
Keywords:MoO3-doping  sintering aids  scavenger  electrical conductivity
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